Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides
Identifieur interne : 001454 ( Main/Repository ); précédent : 001453; suivant : 001455Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides
Auteurs : RBID : Pascal:12-0296700Descripteurs français
- Pascal (Inist)
- Spectre photoélectron UV, Dépôt physique phase vapeur, Couche mince, Dépôt laser pulsé, Niveau coeur, Niveau énergie, Energie liaison, Niveau Fermi, Structure électronique, Addition étain, Travail sortie, Potentiel ionisation, Sonde Kelvin, Addition antimoine, Oxyde d'indium, Oxyde d'étain, Oxyde de zinc, Addition aluminium, Spectre photoélectron RX, In2O3, SnO2, ZnO, 8115C, 8115F, 7320, 7320A.
English descriptors
- KwdEn :
- Aluminium additions, Antimony additions, Binding energy, Core levels, Electronic structure, Energy levels, Fermi level, Indium oxide, Ionization potential, Kelvin probe, Physical vapor deposition, Pulsed laser deposition, Thin films, Tin additions, Tin oxide, Ultraviolet photoelectron spectra, Work functions, X-ray photoelectron spectra, Zinc oxide.
Abstract
X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn-In-Sn-O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In2O3 (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0-7.7 eV) that are similar to undoped In2O3. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7-8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8-5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO2, Al-doped ZnO, Sn-doped In2O3), making ZITO more versatile for applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides</title><author><name sortKey="Proffit, Diana E" uniqKey="Proffit D">Diana E. Proffit</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Harvey, Steven P" uniqKey="Harvey S">Steven P. Harvey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Klein, Andreas" uniqKey="Klein A">Andreas Klein</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Schafranek, Robert" uniqKey="Schafranek R">Robert Schafranek</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Emery, Jonathan D" uniqKey="Emery J">Jonathan D. Emery</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Bruce Buchholz, D" uniqKey="Bruce Buchholz D">D. Bruce Buchholz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Chang, Robert P H" uniqKey="Chang R">Robert P. H. Chang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Bedzyk, Michael J" uniqKey="Bedzyk M">Michael J. Bedzyk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Mason, Thomas O" uniqKey="Mason T">Thomas O. Mason</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0296700</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0296700 INIST</idno><idno type="RBID">Pascal:12-0296700</idno><idno type="wicri:Area/Main/Corpus">001B27</idno><idno type="wicri:Area/Main/Repository">001454</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium additions</term><term>Antimony additions</term><term>Binding energy</term><term>Core levels</term><term>Electronic structure</term><term>Energy levels</term><term>Fermi level</term><term>Indium oxide</term><term>Ionization potential</term><term>Kelvin probe</term><term>Physical vapor deposition</term><term>Pulsed laser deposition</term><term>Thin films</term><term>Tin additions</term><term>Tin oxide</term><term>Ultraviolet photoelectron spectra</term><term>Work functions</term><term>X-ray photoelectron spectra</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Spectre photoélectron UV</term><term>Dépôt physique phase vapeur</term><term>Couche mince</term><term>Dépôt laser pulsé</term><term>Niveau coeur</term><term>Niveau énergie</term><term>Energie liaison</term><term>Niveau Fermi</term><term>Structure électronique</term><term>Addition étain</term><term>Travail sortie</term><term>Potentiel ionisation</term><term>Sonde Kelvin</term><term>Addition antimoine</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Oxyde de zinc</term><term>Addition aluminium</term><term>Spectre photoélectron RX</term><term>In2O3</term><term>SnO2</term><term>ZnO</term><term>8115C</term><term>8115F</term><term>7320</term><term>7320A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn-In-Sn-O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0-7.7 eV) that are similar to undoped In<sub>2</sub>O<sub>3</sub>. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7-8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8-5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO<sub>2</sub>, Al-doped ZnO, Sn-doped In<sub>2</sub>O<sub>3</sub>), making ZITO more versatile for applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>520</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides</s1></fA08><fA11 i1="01" i2="1"><s1>PROFFIT (Diana E.)</s1></fA11><fA11 i1="02" i2="1"><s1>HARVEY (Steven P.)</s1></fA11><fA11 i1="03" i2="1"><s1>KLEIN (Andreas)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHAFRANEK (Robert)</s1></fA11><fA11 i1="05" i2="1"><s1>EMERY (Jonathan D.)</s1></fA11><fA11 i1="06" i2="1"><s1>BRUCE BUCHHOLZ (D.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHANG (Robert P. H.)</s1></fA11><fA11 i1="08" i2="1"><s1>BEDZYK (Michael J.)</s1></fA11><fA11 i1="09" i2="1"><s1>MASON (Thomas O.)</s1></fA11><fA14 i1="01"><s1>Northwestern University, Dept. of Materials Science and Engineering, 2220 Campus Drive</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>5633-5639</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000500808460250</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>35 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0296700</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn-In-Sn-O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0-7.7 eV) that are similar to undoped In<sub>2</sub>O<sub>3</sub>. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7-8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8-5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO<sub>2</sub>, Al-doped ZnO, Sn-doped In<sub>2</sub>O<sub>3</sub>), making ZITO more versatile for applications.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20A</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C30</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Spectre photoélectron UV</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Ultraviolet photoelectron spectra</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Physical vapor deposition</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Pulsed laser deposition</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Niveau coeur</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Core levels</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Niveau énergie</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Energy levels</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Energie liaison</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Binding energy</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Niveau Fermi</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Fermi level</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Structure électronique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electronic structure</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Addition étain</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Tin additions</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Travail sortie</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Work functions</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Potentiel ionisation</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ionization potential</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Sonde Kelvin</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Kelvin probe</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Sonda Kelvin</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Addition antimoine</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Antimony additions</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Tin oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Addition aluminium</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Aluminium additions</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>SnO2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8115F</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7320</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7320A</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>226</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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